View IRHNA63160_409392.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 94299A
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) RDS(on) 0.01 0.01 ID 56A* 56A*
IRHNA67160 100V, N-CHANNEL
TECHNOLOGY
SMD-2
International Rectifier's R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
TM
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 56* 56* 224 250 2.0 20 462 56 25 5.0 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
01/07/05
IRHNA67160
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 60 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.8 -- -- 0.01 4.0 -- 10 25 100 -100 220 80 80 35 75 75 20 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 56A A VDS = VGS, ID = 1.0mA VDS = 25V, IDS = 56A A VDS = 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 56A VDS = 50V VDD = 50V, ID = 56A, VGS = 12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
8690 1600 20 0.45
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 56* 224 1.2 500 5.5
Test Conditions
A
V ns C Tj = 25C, IS = 56A, VGS = 0V A Tj = 25C, IF = 56A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 0.5
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics Pre-Irradiation
IRHNA67160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage Up to 300K Rads (Si)
Min
100 2.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 80V, VGS=0V VGS = 12V, ID = 56A VGS = 12V, ID = 56A VGS = 0V, ID = 56A
-- 4.0 100 -100 10 0.011 0.010 1.2
Part numbers IRHNA67160 and IRHNA63160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2)) Br I Au 36.7 59.8 82.3
Energy
(MeV) 309 341 350
Range
(m) 39.5 32.5 28.4
@VGS= @VGS= @VGS= @VGS=
VDS (V)
@VGS= @VGS= @VGS=
0V 100 100 100
-5V 100 100 100
-10V 100 100 -
-15V 100 30 -
-17V 100 -
-19V 100 -
-20V 40 -
120 100 80 60 40 20 0 0 -5 -10 VGS -15 -20
Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
VDS
3
IRHNA67160
Pre-Irradiation
1000
1000
VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
5.0V 10
10 5.0V 60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
2.5
ID = 56A
2.0
ID, Drain-to-Source Current (A)
100
T J = 150C
T J = 25C 10
(Normalized)
1.5
1.0
0.5
1.0 5 5.5 6 6.5
VDS = 25V 15 60s PULSE WIDTH 7 7.5 8 8.5 9
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHNA67160
14000 12000 10000 8000 6000 4000 2000 0 1
100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED
20 ID = 56A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
Ciss
12
Coss
8
Crss
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 50 100 150 200 250 300
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
T J = 150C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100s 1ms
T J = 25C
10
10 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100
VGS = 0V 1.0 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V)
10ms
1000
1
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
www.irf.com
5
IRHNA67160
Pre-Irradiation
120
LIMITED BY PACKAGE
100
VDS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
80
-V DD
VGS
60
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS 90%
20
0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNA67160
1000
EAS , Single Pulse Avalanche Energy (mJ)
15V
800
ID 25A 35.4A BOTTOM 56A TOP
VDS
L
DRIVER
600
RG
D.U.T.
IAS tp
+ - VDD
A
400
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
www.irf.com
7
IRHNA67160
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.29mH Peak IL = 56A, VGS = 12V A ISD 56A, di/dt 640A/s, VDD 100V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2005
8
www.irf.com

▲Up To Search▲

Price & Availability of IRHNA63160

	To Download IRHNA63160 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .